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DMN3008SFGQ - N-CHANNEL MOSFET

Description

This MOSFET is designed to meet the stringent requirements of Automotive applications.

Low RDS(ON) Ensures on-state losses are minimized Small, form factor thermally efficient package en

Features

  • BVDSS 30V RDS(ON) max 4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID max TC = +25°C 62A 56A.

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ADVANCE INFORMATION DMN3008SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits BVDSS 30V RDS(ON) max 4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID max TC = +25°C 62A 56A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Low RDS(ON) – Ensures on-state losses are minimized  Small, form factor thermally efficient package enables higher density end products  Occupies only 33% of the board area occupied by SO-8 enabling smaller end products  100% Unclamped Inductive Switch (UIS) Test in Production  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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