Datasheet Summary
ADVANCE INFORMATION
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 30V
RDS(ON) Max
4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V
ID Max TC = +25°C
62A 56A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
- Low RDS(ON)
- Ensures On-State Losses are Minimized
- Small, Form Factor Thermally Efficient Package Enables Higher
Density End Products
- Occupies only 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Products
- 100% Unclamped Inductive Switch (UIS) Test in Production
-...