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DMN3008SFG - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • Low RDS(ON).
  • Ensures On-State Losses are Minimized.
  • Small, Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies only 33% of the Board Area Occupied by SO-8 Enabling Smaller End Products.
  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(ON) Max 4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID Max TC = +25°C 62A 56A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits  Low RDS(ON) – Ensures On-State Losses are Minimized  Small, Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies only 33% of the Board Area Occupied by SO-8 Enabling Smaller End Products  100% Unclamped Inductive Switch (UIS) Test in Production  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.