Datasheet Summary
ADVANCE INFORMATION
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Product Summary
Features and Benefits
BVDSS 30V
RDS(ON) max
4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V
ID max TC = +25°C
62A 56A
Description and Applications
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
- Low RDS(ON)
- Ensures on-state losses are minimized
- Small, form factor thermally efficient package enables higher density end products
- Occupies only 33% of the board area occupied by SO-8 enabling smaller end products
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Totally...