* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* 100% UIS (Avalanche) rated
DMN3010LFG Datasheet (216.31 KB)
DMN3010LFG
216.31 KB
N-channel mosfet.
NEW PRODUCT DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 8.5mΩ @ VGS = 10V 10.5mΩ @ VGS = 4.5V ID T.
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