This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
Low RDS(ON).
ensures on state losses are minimized.
Small form factor thermally efficient package enables higher
density end products.
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product.
Full PDF Text Transcription for DMN3010LFG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
DMN3010LFG. For precise diagrams, and layout, please refer to the original PDF.
N) 8.5mΩ @ VGS = 10V 10.5mΩ @ VGS = 4.5V ID TC = +25°C 30A 25A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product • 100% UIS (Avalanche) rated • 100% Rg tested • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimo