Datasheet4U Logo Datasheet4U.com

DMN3010LK3 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 43A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 30V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DMN3010LK3 N-Channel MOSFET Diodes
DMN3010LFG N-Channel MOSFET Diodes
DMN3010LSS Single N-channel MOSFET Diodes Incorporated
DMN3011LSS 30V N-CHANNEL MOSFET DIODES
DMN3012LEG 30V N-CHANNEL MOSFET DIODES

Other Datasheets by Inchange Semiconductor

Part Number Description
DMN3016LK3 N-Channel MOSFET
DMN3009SK3 N-Channel MOSFET
DMN3024LK3 N-Channel MOSFET
DMN10H099SK3 N-Channel MOSFET
DMN10H100SK3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 43A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 30 V ±20 V ID Drain Current-Continuous 43 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 27 W TJ Max.