DMN3010LFG Datasheet | Diodes Incorporated

NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 8.5mΩ @ VGS = 10V 10.5mΩ @ VGS = 4.5V ID TC = +25°C 30A 25A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features - Low RDS(ON) - ensures on state losses are minimized - Small form factor thermally efficient package enables higher density end products - Occupies just 33% of the board area occupied by SO-8 enabling smaller end product - 100% UIS (Avalanche) rated - 100% Rg tested - Totally Lead-Free & Fully RoHS...