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DMN3010LFG Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 8.5mΩ @ VGS = 10V 10.5mΩ @ VGS = 4.

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • 100% UIS (Avalanche) rated.
  • 100% Rg tested.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliabi.

Similar Datasheet

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