* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* 100% Unclamped Inductive Switch (UIS
DMN3025LFG Datasheet (272.10 KB)
DMN3025LFG
272.10 KB
N-channel mosfet.
NEW PRODUCT DMN3025LFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) Max 18mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V .
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