Download DMN3032LFDBQ Datasheet PDF
Diodes Incorporated
DMN3032LFDBQ
DMN3032LFDBQ is DUAL N-CHANNEL MOSFET manufactured by Diodes Incorporated.
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) Max 30mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V ID Max TA = +25°C 6.2A 5.2A Features and Benefits - 100% Unclamped Inductive Switching - Ensures More Reliable and Robust Application - Low On-Resistance - Minimizes Power Losses - Low Gate Charge - Minimizes Switching Losses - Small Form Factor Low Profile Package - Increased Power Density - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability - PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and ideal for use in: - Body Control Electronics - Power Management Functions - DC-DC Converters - Case: U-DFN2020-6 - Case Material: Molded Plastic,...