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DMN3032LFDBWQ - Dual N-CHANNEL MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of Automotive applications.

Body Control Electronics Power Management Functions DC-DC Converters Case: U-DFN2

Key Features

  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN3032LFDBWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 30mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V ID Max TA = +25°C 5.5A 4.7A Features and Benefits  100% Unclamped Inductive Switching—Ensures More Reliable and Robust Application  Low On-Resistance—Minimizes Power Losses  Low Gate Charge—Minimizes Switching Losses  Small Form Factor Low-Profile Package—Increased Power Density  Sidewall Plated for Improved Optical Inspection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN3032LFDBWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.