DMN3032LFDBWQ Datasheet | Diodes Incorporated

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 30mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V ID Max TA = +25°C 5.5A 4.7A Features and Benefits - 100% Unclamped Inductive Switching- Ensures More Reliable and Robust Application - Low On-Resistance- Minimizes Power Losses - Low Gate Charge- Minimizes Switching Losses - Small Form Factor Low-Profile Package- Increased Power Density - Sidewall Plated for Improved Optical Inspection - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - The DMN3032LFDBWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://.diodes./quality/product-definitions/ Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and ideal for use in: - Body Control Electronics - Power Management Functions - DC-DC Converters - Case: U-DFN2020-6 - Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish- Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 - Terminals Connections: See Diagram...