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DMN3032LFDBQ - DUAL N-CHANNEL MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of Automotive applications.

Body Control Electronics Power Management Functions DC-DC Converters Case: U-DFN20

Key Features

  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN3032LFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) Max 30mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V ID Max TA = +25°C 6.2A 5.2A Features and Benefits  100% Unclamped Inductive Switching – Ensures More Reliable and Robust Application  Low On-Resistance – Minimizes Power Losses  Low Gate Charge – Minimizes Switching Losses  Small Form Factor Low Profile Package – Increased Power Density  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications.