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DMN3115UDM Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) max 60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V ID TA = +25°C 3.2A 2.7A 2.

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  General Purpose Interfacing Switch  Power Management Functions Analog Switch

Key Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • ESD Protected Gate.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT26.
  • Case Material.
  • Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-.

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