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DMN3110SQ - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

General purpose interfacing switches Power-management functions Boost applications Analog switches

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN3110SQ is suitable for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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THE DMN3110SQ IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE USE THE DMN3061SQ. DMN3110SQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 73mΩ @ VGS = 10V 110mΩ @ VGS = 4.5V ID Max TA = +25°C 3.3A 2.7A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  General purpose interfacing switches  Power-management functions  Boost applications  Analog switches Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.