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DMN3115UDM
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(on) max
60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V
ID TA = +25°C
3.2A
2.7A
2.1A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch Power Management Functions Analog Switch
Features
Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.