DMN4800LSS Datasheet - Diodes

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN4800LSS Features

* Lo

* w On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability NEW PRODUCT

DMN4800LSS General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data * Case: * SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammabi.

DMN4800LSS Datasheet (316.37 KB)

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DMN4800LSS

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DIODES ↗

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316.37 KB

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N-channel enhancement mode mosfet.
DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A .

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DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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DMN4800LSS Features

DMN4800LSS General Description

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