DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

Description

DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A .
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high.

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Datasheet Specifications

Part number: DMN4800LSS
Manufacturer: DIODES ↗
File Size: 316.37 KB
Datasheet: DMN4800LSS-Diodes.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Lo
* w On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability NEW PRODUCT

Applications

* Mechanical Data
* Case:
* SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per M

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DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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