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Product Summary
V(BR)DSS 30V
RDS(on)
14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V
ID max TA = +25°C
8.0A
6.7A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
• DC-DC Converters • Power management functions
DMN4800LSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefitss
• 14mΩ @ VGS = 10V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound.