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DMN4800LSS - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case:

SO-8 Case Material: Molded Plastic, “Green” Molding Compound.

Key Features

  • Lo.
  • w On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability NEW.

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Full PDF Text Transcription for DMN4800LSS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN4800LSS. For precise diagrams, and layout, please refer to the original PDF.

DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Features  Lo    ...

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0V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Features  Lo       w On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability NEW PRODUCT Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data  Case:  SO-8 Case Material: Molded Plastic, “Green” Molding Compound.