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Diodes Semiconductor Electronic Components Datasheet

DMN6069SE Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
60V
RDS(ON) max
69m@ VGS = 10V
100m@ VGS = 4.5V
ID
TA = +25°C
4.3A
3.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Motor control
Transformer driving switch
DC-DC Converters
Power management functions
Uninterrupted power supply
DMN6069SE
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
100% Unclamped Inductive Switch (UIS) test in production
Fast switching speed
Low on-resistance
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
SOT223
D
Top View
Pin Out - Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN6069SE-13
Qualification
Standard
Case
SOT223
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YWW
N6069
YWW
N6069
= Manufacturer’s Marking
N6069 = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)
DMN6069SE
Datasheet number: DS36474 Rev. 2 - 2
1 of 6
www.diodes.com
January 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN6069SE Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
DMN6069SE
Value
60
±20
4.3
3.3
10
8
25
3.2
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.2
1.4
58
11
8.9
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
60

1



Typ Max Unit
Test Condition
  V VGS = 0V, ID = 250μA
 1 μA VDS = 60V, VGS = 0V
 100 nA VGS = 20V, VDS = 0V
3
V VDS = VGS, ID = 250μA
47
54
69
100
m
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 2.4A
0.8 1.1
V VGS = 0V, IS = 2.5A
825
40
29
pF
VDS = 30V, VGS = 0V
f = 1MHz
2.3  VDS = 0V, VGS = 0V, f = 1.0MHz
7.2
16
3.2

nCVDS = 30V, ID = 12A
2.8
3.8
6.7
16
nS
VDD = 30V, VGS = 10V,
RG = 6, ID = 12A
5.3 
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN6069SE
Datasheet number: DS36474 Rev. 2 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated


Part Number DMN6069SE
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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