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Diodes Semiconductor Electronic Components Datasheet

DMN6070SFCL Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
60V
RDS(ON) max
85 m@ VGS = 10V
120 m@ VGS = 4V
ID max
TA = +25°C
3.0A
2.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Power Management Functions
Analog Switch
X1-DFN1616-6
Type E
Pin 1
DMN6070SFCL
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Typical off board profile of 0.5mm - ideally suited for thin
applications
Low RDS(ON) – minimizes conduction losses
PCB footprint of 2.56mm2
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: X1-DFN1616-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (NiPdAu Finish over Copper leadframe)
Terminals: Solderable per MIL-STD-202, Method 208 e4
Weight: 0.04 grams (approximate)
D
G
Top View
Bottom View
S
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Notes:
Product
DMN6070SFCL-7
Reel size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
N60
YM
N60 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
1 of 5
www.diodes.com
March 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN6070SFCL Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
DMN6070SFCL
Value
60
±20
3.0
2.5
10
Units
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
PD
RθJA
TJ, TSTG
Value
0.6
1.8
200
67
-55 to +150
Units
W
W
°C/W
°C
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS =10V)
Total Gate Charge (VGS =4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(th)
RDS (ON)
|Yfs|
VSD
1
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Typ
67
74
2.6
0.7
606
32.6
24.6
1.5
12.3
5.6
1.7
1.9
3.5
4.1
35
11
Max
1.0
±100
3
85
120
1.2
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 1.5A
VGS = 4V, ID = 0.5A
S VDS = 5V, ID = 1.5A
V VGS = 0V, IS = 3A
pF
pF
VDS = 20V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 30V, ID = 3A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 20, RL = 50
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated


Part Number DMN6070SFCL
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 5 Pages
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