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Diodes Semiconductor Electronic Components Datasheet

DMN6070SSD Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN6070SSD
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(ON) max
80m@ VGS = 10V
100m@ VGS = 4.5V
ID max
TA = +25°C
4.1A
3.6A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
Top View
S1 D1
G1 D1
S2 D2
G2 D2
Top View
Pin Configuration
G1
D1 D2
G2
S1
Equivalent Circuit
S2
Ordering Information (Note 4)
Notes:
Part Number
DMN6070SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
85
N6070SD
YY WW
= Manufacturer’s Marking
N6070SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
14
DMN6070SSD
Document number: DS36342 Rev. 3 - 2
1 of 6
www.diodes.com
January 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN6070SSD Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMN6070SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L=0.1mH
Avalanche Energy (Note 7) L=0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
60
±20
3.3
2.6
4.1
3.4
2.0
12
10
5.9
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
104
61
1.5
83
50
14.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS= 4.5V)
Total Gate Charge (VGS= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
60
1.0
Typ Max
⎯⎯
1
⎯ ±100
3.0
68 80
70 100
0.75 1.1
588
26.5
20
1.5
5.6
12.3
1.7
1.9
3.5
4.1
35
11
18 —
12 —
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V ID = 250μA, VGS= 0V
μA VDS= 60V, VGS= 0V
nA VGS= ±16V, VDS= 0V
V ID= 250μA, VDS= VGS
m
VGS= 10V, ID= 4.5A
VGS= 4.5V, ID= 3.5A
V IS= 12A, VGS= 0V
pF
VDS= 30V, VGS= 0V
f= 1MHz
Vgs= 0V, Vds= 0V, f=1MHz,
nC VDS= 30V, ID= 3A
nS
VDD= 30V, VGS= 10V
RL 50, RG 20
nS IS = 12A, dI/dt = 100A/μs
nC IS = 12A, dI/dt = 100A/μs
DMN6070SSD
Document number: DS36342 Rev. 3 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated


Part Number DMN6070SSD
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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