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DMN6075S Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN6075S
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Summary
V(BR)DSS
60V
RDS(ON) max
85 mΩ @ VGS = 10V
120 mΩ @ VGS = 4.5V
ID max
TA = +25°C
2.5A
2.0A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Backlighting
SOT-23
D
Features and Benefits
N MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
Top View
GS
Top View
G
S
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Product
DMN6075S-7
DMN6075S-13
Reel size (inches)
7
13
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-23
S67 = Product Type Marking Code
YM = Date Code Marking
Y or Y̅ = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
DMN6075S
Document number: DS37023 Rev. 4 - 2
1 of 7
www.diodes.com
April 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN6075S Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
DMN6075S
Value
60
±20
2.0
1.5
2.5
2.0
12
Units
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
TA = +25°C
TA = +70°C
Steady State
Symbol
PD
RJA
PD
RJA
TJ, TSTG
Value
0.8
0.5
157
1.15
0.7
110
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS =10V)
Total Gate Charge (VGS =4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
1
Typ
69
75
606
32.6
24.6
1.5
12.3
5.6
1.7
1.9
3.5
4.1
35
11
Max
1.0
±100
3
85
120
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 60V, VGS = 0V
nA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 3.2A
VGS = 4.5V, ID = 2.8A
V VGS = 0V, IS = 2.5A
pF
pF VDS = 20V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 30V, ID = 3A
nC
ns
ns VGS = 10V, VDS = 30V,
ns RG = 20Ω, RL = 50Ω
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN6075S
Document number: DS37023 Rev. 4 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated


Part Number DMN6075S
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 7 Pages
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