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DMN65D8LDW Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(on) Max 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID Max TA = +25°C 170mA.

General Description

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

 DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Mechanical Data  Case: SOT363 (Standard)  Case Material: Molded Plastic;

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface Mount Package.
  • ESD Protected Gate, 1KV (HBM).
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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