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DMN65D8LDWQ - Dual N-CHANNEL MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Inp

Key Features

  • V(BR)DSS 60V RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170mA 200mA.

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NEW PRODUCT DMN65D8LDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS 60V RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170...

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RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate, 1KV (HBM)  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

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