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DMN65D8LDWQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS 60V
RDS(ON)
8Ω @ VGS = 5V 6Ω @ VGS = 10V
Package SOT363
ID TA = +25°C
170mA
200mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
DMN65D8LDWQ Datasheet
