DMN65D8LFB
Description
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.
Key Features
- N-Channel MOSFET
- Low On-Resistance
- Low Gate-Threshold Voltage
- Low-Input Capacitance
- Fast Switching Speed
- Small-Surface Mount Package
- ESD Protected Gate, 1.2kV HBM
- Totally Lead-Free & Fully RoHS pliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
- Case: X1-DFN1006-3
