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DMN65D8LFB
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
BVDSS 60V
RDS(ON) 3.0Ω @ VGS = 10V 4.0Ω @ VGS = 5V
ID TA = +25°C
400mA
330mA
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.
DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Features and Benefits
N-Channel MOSFET Low On-Resistance Low Gate-Threshold Voltage Low-Input Capacitance Fast Switching Speed Small-Surface Mount Package ESD Protected Gate, 1.
DMN65D8LFB Datasheet
