DMN65D8LFB Datasheet (PDF) Download
Diodes Incorporated
DMN65D8LFB

Description

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.

Key Features

  • N-Channel MOSFET
  • Low On-Resistance
  • Low Gate-Threshold Voltage
  • Low-Input Capacitance
  • Fast Switching Speed
  • Small-Surface Mount Package
  • ESD Protected Gate, 1.2kV HBM
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 &
  • Halogen and Antimony Free. “Green” Device (Note
  • Case: X1-DFN1006-3