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DMN65D8LW - N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions Bat

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface Mount Package.
  • ESD Protected Gate, 1KV (HBM).
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMN65D8LW (Reference)

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DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(on) Max 3Ω @ VGS = 10V 4Ω @ VGS = 5V ID TA = +25°C 300mA 260mA Features and Benefits • Low On-Re...

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@ VGS = 5V ID TA = +25°C 300mA 260mA Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate, 1KV (HBM) • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/auto

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