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DMN65D8LDW - Dual N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DC-DC Converters Power Management Functions Battery Operated Sys

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface Mount Package.
  • ESD Protected Gate, 1KV (HBM).
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMN65D8LDW (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN65D8LDW. For precise diagrams, and layout, please refer to the original PDF.

DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(on) Max 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID Max TA = +25°C 170mA 200mA Features and Benefit...

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= 5V 6Ω @ VGS = 10V ID Max TA = +25°C 170mA 200mA Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate, 1KV (HBM)  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Qsuffix) part. A listing can be found at htt

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