DMP2002UPS Datasheet | Diodes Incorporated

Features V(BR)DSS -20V RDS(ON) 1.9mΩ @ VGS = -10V 2.4mΩ @ VGS = -4.5V 3.8mΩ @ VGS = -2.5V ID TC = +25°C -60A -60A -60A Description This new generation P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Applications - Switch - Thermally Efficient Package-Cooler Running Applications - High Conversion Efficiency - Low RDS(ON) - Minimizes On State Losses - <1.1mm Package Profile - Ideal for Thin Applications - Lead-Free Finish; Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability Mechanical Data - Case: POWERDI5060-8 - Case Material: Molded Plastic, “Green” Molding pound; UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 - Weight: 0.097 grams (Approximate) POWERDI5060-8 Top View Pin1 Bottom View Internal Schematic SD SD SD GD Top View Pin Configuration Ordering Information (Note 4) Notes: Part Number DMP2002UPS-13 Case POWERDI5060-8 Packaging 2,500 / Tape &...