Description
This new generation P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.
Key Features
- V(BR)DSS -20V RDS(ON) 1.9mΩ @ VGS = -10V 2.4mΩ @ VGS = -4.5V 3.8mΩ @ VGS = -2.5V ID TC = +25°C
- 60A -60A -60A