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DMP2007UFG Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2007UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
-20V
RDS(ON) max
5.5m@ VGS = -10V
7.0mΩ @ VGS = -4.5V
9.0mΩ @ VGS = -2.5V
ID max
TC = +25°C
-40A
-40A
-40A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Features
Low RDS(ON) ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
POWERDI3333-8
S Pin 1
S
S
G
Top View
D
D
D
D
Bottom View
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2007UFG-7
DMP2007UFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
S43
POWERDI is a registered trademark of Diodes Incorporated
DMP2007UFG
Document number: DS37943 Rev. 2 - 2
S43 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 ~ 53)
1 of 7
www.diodes.com
April 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2007UFG Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current L=0.1mH
Avalanche Energy L=0.1mH
TA = +25°C
TA = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMP2007UFG
Value
-20
±12
-18.0
-14.5
-40
-80
-2.2
-30
50
Units
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
2.3
41
58
143
3.0
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
Qrr
Min
-20
-0.4
Typ
4.4
4.9
6.5
-0.7
4621
652
403
3.2
39
85
8.3
9.6
10.1
9.8
61
51
20.1
10.1
Max
-1
±100
-1.3
5.5
7.0
9.0
-1.2
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -16V, VGS = 0V
nA VGS = 12V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -10V, ID = -15A
mVGS = -4.5V, ID = -15A
VGS = -2.5V, ID = -10A
V VGS = 0V, IS = -10A
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDD = -10V, ID = -20A
ns
VGS = -4.5V, VDD = -10V,
RG = 1, ID = -10A
ns IF = -10A, di/dt = 100A/µs
nC IF = -10A, di/dt = 100A/µs
Notes:
5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design
while RθJA is determined by the user’s board design.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP2007UFG
Document number: DS37943 Rev. 2 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated


Part Number DMP2007UFG
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 7 Pages
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