DMP2004WK
DMP2004WK is P-Channel MOSFET manufactured by Diodes Incorporated.
Features
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- Low On-Resistance Very Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/Ro HS pliant (Note 2) ESD Protected Gate "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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- - SOT-323
NEW PRODUCT
Case: SOT-323 Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
Drain
Gate
ESD PROTECTED
TOP VIEW
Gate Protection Diode
Source
Equivalent Circuit
TOP VIEW
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current
@TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 ±8 -400 -1.4 Units V V m A A
Characteristic
Thermal Characteristics
@TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 250 500 -55 to +150 Units m W °C/W °C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance .. Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4.
@TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min -20 ⎯ ⎯ -0.5 ⎯ 200 -0.5 ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ 0.7 1.1 1.7 ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ -1.0 ±1.0 -1.0 0.9 1.4 2.0 ⎯ -1.2 175 30 20 Unit V μA μA V Ω m S V p F p F p F...