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DMP2066LSN Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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Features
Low RDS(ON):
40 mΩ @VGS = -4.5V
70 mΩ @VGS = -2.5V
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
DMP2066LSN
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
Case: SC-59
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See page 4
Weight: 0.008 grams (approximate)
SC-59
Drain
D
Gate
TOP VIEW
Source
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
www.DataSheet.co.kr
IDM
IS
GS
Pin Configuration
Value
-20
±12
-4.6
-3.7
-18
2.0
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.25
100
-55 to +150
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMP2066LSN
Document number: DS31467 Rev. 3 - 2
1 of 4
www.diodes.com
August 2008
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/


Diodes Semiconductor Electronic Components Datasheet

DMP2066LSN Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2066LSN
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)
Symbol
TJ = 25°C
BVDSS
IDSS
IGSS
VGS(th)
ID (ON)
Min
-20
-0.6
-15
Static Drain-Source On-Resistance (Note 5)
RDS (ON)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)
DYNAMIC PARAMETERS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gFS
VSD
IS
Ciss
Coss
Crss
Gate Resistance
RG
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
QG
QGS
QGD
td(on)
tr
td(off)
tf
Notes:
5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
-0.5
Typ
-0.96
29
55
9
-0.72
820
200
160
2.5
10.1
1.5
4.3
4.4
9.9
28.0
23.4
www.DataSheet.co.kr
Max
-1
±100
-1.2
40
70
-1.4
1.7
30
VGS = 10V
VGS = 4.5V
24
20
VDS = 5.0V
16
Unit Test Condition
V ID = -250μA, VGS = 0V
μA VDS = -20V, VGS = 0V
nA VDS = 0V, VGS = ±12V
V VDS = VGS, ID = -250μA
A VGS = -4.5V, VDS = -5V
mΩ
VGS = -4.5V, ID = -4.6A
VGS = -2.5V, ID = -3.8A
S VDS = -10V, ID = -4.5A
V IS = -2.1A, VGS = 0V
A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
Ω
VDS = 0V, VGS = 0V
f = 1.0MHz
nC VDS = -10V, VGS = -4.5V,
ID = -4.5A
ns VDS = -10V, VGS = -4.5V,
ID = -1A, RG = 6.0Ω
18
VGS = 3.0V
12
12
VGS = 2.5V
6
VGS = 2.0V
VGS = 1.5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
8
4
TA = 150°C
TA = 85°C
TA = 125°C
TA = 25°C
0 TA = -55°C
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMP2066LSN
Document number: DS31467 Rev. 3 - 2
2 of 4
www.diodes.com
August 2008
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/


Part Number DMP2066LSN
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 4 Pages
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