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DMP213DUFA Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
-25V
RDS(ON)
10@ VGS = -4.5V
13@ VGS = -2.7V
ID
TA = +25°C
-166mA
-138mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Portable Applications
Power Management Functions
DMP213DUFA
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.4mm Ultra Low Profile Package for Thin Application
0.48mm2 Package Footprint, 16 Times Smaller than SOT23
Low VGS(th), Can be Driven Directly From a Battery
Low RDS(on)
ESD Protected Gate (>6kV Human Body Mode)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.00043 grams (approximate)
X2-DFN0806-3
Drain
Gate
Body
Diode
ESD HBM >6kV
Bottom View
Top View
Package Pin Configuration
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP213DUFA-7B
Case
X2-DFN0806-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN213DUFA-7B
36 36 = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP213DUFA
Document number: DS36466 Rev. 1 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP213DUFA Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP213DUFA
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Characteristic
(Note 6)
VGS = 4.5V TA = +70°C (Note 6)
(Note 5)
(Note 7)
Symbol
VDSS
VGSS
ID
ID
IDM
Value
-25
-8
-166
-125
-145
-500
Unit
V
mA
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 5)
Symbol
PD
RθJA
TJ, TSTG
Value
360
353
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max
BVDSS
IDSS
IGSS
-25
——
— -1
— -100
VGS(th)
RDS(on)
-0.65
-0.9
-1.5
10
13
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
— 189 —
— — -1.5
— 27.2 —
— 6.1 —
— 1.7 —
— 0.35 —
— 0.08 —
— 0.06 —
— 4.5 —
— 2.3 —
— 24.1 —
— 11 —
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit Test Condition
V VGS = 0V, ID = -250μA
µA VDS = -20V, VGS = 0V
nA VGS = -8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -0.2A
VGS = -2.7V, ID = -0.05A
S VDS = -5V, ID = -0.2A
V VGS = 0V, IS = -0.2A
pF
pF
VDS = -10V, VGS = 0V,
f = 1MHz
pF
nC
nC
nC
VDS = -5V, ID = -0.2A,
VGS = -4.5V
ns
ns VDS = -6V, VGS = -4.5V,
ns ID = -0.2A, RG = 50
ns
DMP213DUFA
Document number: DS36466 Rev. 1 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated


Part Number DMP213DUFA
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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