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Diodes Semiconductor Electronic Components Datasheet

DMP2160UFDB Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Features
Low On-Resistance
70mΩ @VGS = -4.5V
85mΩ @VGS = -2.5V
86mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -0.9V Max
Fast Switching Speed
Low Input/Output Leakage
Low Profile, 0.5mm Max Height
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
DMP2160UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
Case: DFN2020B-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.0065 grams (approximate)
DFN2020B-6
DG S
32 1
BOTTOM VIEW
45 6
S GD
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
89
-55 to +150
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-3.8
-13
Notes:
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
Units
V
V
A
A
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
1 of 6
www.diodes.com
September 2009
© Diodes Incorporated
Free Datasheet http://www.dat


Diodes Semiconductor Electronic Components Datasheet

DMP2160UFDB Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2160UFDB
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min Typ Max
-20 ⎯ ⎯
⎯ ⎯ -1
⎯ ⎯ ±100
⎯ ⎯ ±800
-0.45
54
68
86
8
0.7
-0.9
70
85
-1.2
536
68
59
- 8.72 -
- 6.5 -
- 0.8 -
- 1.4 -
- 11.51 -
- 12.09 -
- 55.34 -
- 27.54 -
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
mΩ VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
S VDS = -5V, ID = -2.8A
V VGS = 0V, IS = -1.6A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VGS = -4.5V, VDD = -10V,
nC ID = -1.5A
ns
ns VGEN = -4.5V, VDD = -10V,
ns RL = 10, RG = 6
ns
10
VGS = -8.0V
VGS = -4.5V
8 VGS = -2.5V
VGS = -2.0V
6
4
VGS = -1.5V
2
0
01
VGS = -1.0V
VGS = -1.2V
2 3 45
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
10
VDS = -5V
8
6
4
2
0
0.5
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1 1.5
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
2 of 6
www.diodes.com
September 2009
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/


Part Number DMP2160UFDB
Description DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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