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DMP2540UCB9 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2540UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS
-25V
RDS(on)
33mΩ
Qg
4.8nC
Qgd
1.0nC
ID
-5.2A
Features and Benefits
LD-MOS Technology with the Lowest Figure of Merit:
RDS(on) = 33mto Minimize On-State Losses
Qg = 4.8nC for Ultra-Fast Switching
Vgs(th) = -0.6V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.62mm for Low Profile
ESD = 6kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: U-WLB1515-9
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (Approximate)
Battery Management
Load Switch
Battery Protection
GDS
Drain
ESD PROTECTED TO 6kV
D DS
DSS
Top-View
Pin Configuration
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMP2540UCB9-7
U-WLB1515-9
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1515-9
3W = Product Type Marking Code
3W YM = Date Code Marking
Y = Year (ex: Y = 2011)
YM M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
May 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2540UCB9 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Source Pin Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤1%)
Continuous Gate Clamp Current (Note 5)
Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤1%)
Symbol
VDSS
VGSS
ID
ID
IDM
IS
ISM
IG
IGM
DMP2540UCB9
Value
-25
-6
-4.0
-3.0
-5.2
-4.0
-30
-2.0
-15
-0.6
-8
Units
V
V
A
A
A
A
A
A
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RJA
RJA
TJ, TSTG
Value
1.0
1.8
126.8
69
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Qrr
trr
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-25
-
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-0.6
33
42
52
12
-0.7
100
130
342
174
70
28
4.8
0.5
1.0
11
12
56
42
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
-1
-100
-1.1
40
50
60
-
-1
-
-
450
225
90
35
6.0
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = - 2A
mΩ VGS = -2.5V, ID = -2A
VGS = -1.8V, ID = -2A
S VDS = -10V, ID = -2A
V VGS = 0V, IS = -2A
nC Vdd = 9.5V, IF = 2A, di/dt =
ns 200A/μs
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V,
nC ID = -2A
ns
ns VDD = -10V, VGS = -4.5V,
ns IDS = -2A, RG = 2Ω,
ns
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
2 of 6
www.diodes.com
May 2015
© Diodes Incorporated


Part Number DMP2540UCB9
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
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