DMP2540UCB9 Datasheet | Diodes Incorporated

ADVANCE INNEFWORPRMOADTIUOCNT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -25V RDS(on) 33mΩ Qg 4.8nC Qgd 1.0nC ID -5.2A Features and Benefits - LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching - Vgs(th) = -0.6V typ. for a Low Turn-On Potential - CSP with Footprint 1.5mm × 1.5mm - Height = 0.62mm for Low Profile - ESD = 6kV HBM Protection of Gate - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new...