DMP2540UCB9
Description
and Applications This new generation MOSFET is designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
- LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching
- Vgs(th) = -0.6V typ. for a Low Turn-On Potential
- CSP with Footprint 1.5mm × 1.5mm
- Height = 0.62mm for Low Profile
- ESD = 6kV HBM Protection of Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
- Qualified to AEC-Q101 Standards for High Reliability
