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Diodes Semiconductor Electronic Components Datasheet

DMT3004LFG Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT3004LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
30V
RDS(ON) max
4.5mΩ @ VGS = 10V
7.0mΩ @ VGS = 4.5V
ID max
TC = +25°C
(Note 9)
25A
25A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low RDS(ON) Ensures on State Losses Are Minimized
Excellent Qgd x RDS(ON) Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
100% UIS (Avalanche) Rated
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072 grams (Approximate)
POWERDI®3333-8
S Pin 1
S
S
G
Top View
D
D
D
D
Bottom View
18
27
36
45
Top View
Internal Schematic
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT3004LFG-7
DMT3004LFG-13
Case
POWERDI®3333-8
POWERDI®3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SG3
SG3 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMT3004LFG
Document number: DS36944 Rev. 2 - 2
1 of 7
www.diodes.com
January 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMT3004LFG Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Notes 6 & 9) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, Duty Cycle = 1%)
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMT3004LFG
Value
30
+20
-16
25
25
10.4
8.3
3
95
27
110
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TA = +25°C
Symbol
PD
RJC
PD
RJA
TJ, TSTG
Value
42
3
2.1
60
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
Min
30
-
-
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
-1
-
100
-100
-3
3.5 4.5
5 7.0
0.7 1
2370
1360
240
0.6
20
44
7
8
6.2
4.3
21
8
25
37
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
nA VGS = +20V, VDS = 0V
VGS = -16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 7A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, ID = 20A
ns
VDD = 15V, VGS = 10V,
RL = 0.75Ω, RG = 3Ω, ID = 20A
ns
nC
IF = 15A, di/dt = 500A/μs
Notes:
5. RJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RJC is guaranteed by design
while RJA is determined by the user’s board design.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
PowerDI is a registered trademark of Diodes Incorporated.
DMT3004LFG
Document number: DS36944 Rev. 2 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated


Part Number DMT3004LFG
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 7 Pages
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