* low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features
* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching
* Ensures More Reliable and Robust End Application
DMTH10H030LK3 Datasheet (540.29 KB)
DMTH10H030LK3
540.29 KB
N-channel mosfet.
Green DMTH10H030LK3 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 30mΩ @ VGS = 10V 45mΩ @ VGS = 6.0V ID TC =.
📁 Related Datasheet
DMTH10H032LDVWQ 100V DUAL N-CHANNEL MOSFET (DIODES)
DMTH10H032LFVW 100V N-CHANNEL MOSFET (DIODES)
DMTH10H032LFVWQ 100V N-CHANNEL MOSFET (DIODES)
DMTH10H032LPDW 100V Dual N-CHANNEL MOSFET (DIODES)
DMTH10H032LPDWQ 100V Dual N-Channel MOSFET (DIODES)
DMTH10H032LPSW 100V N-CHANNEL MOSFET (DIODES)
DMTH10H032LPSWQ 100V N-CHANNEL MOSFET (DIODES)
DMTH10H032SPSW 100V N-CHANNEL MOSFET (DIODES)
DMTH10H032SPSWQ 100V N-CHANNEL MOSFET (DIODES)
DMTH10H038SPDW 100V Dual N-CHANNEL MOSFET (DIODES)
