DMTH10H030LK3 - N-CHANNEL MOSFET

Diodes Incorporated

General Description

This new generation MOSFET

Key Features

low on-resistance and fast switching, making it ideal for high efficiency power management.

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DMTH10H030LK3 n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMTH10H030LK3
Manufacturer	Diodes Incorporated
File Size	540.29 KB
Description	N-CHANNEL MOSFET
Datasheet	DMTH10H030LK3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green DMTH10H030LK3 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 30mΩ @ VGS = 10V 45mΩ @ VGS = 6.0V ID TC = +25°C 28A 23A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low QG – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.