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DSS2515M TRANSISTOR

DSS2515M Description

DSS2515M 15V NPN LOW VCE(sat) TRANSISTOR IN DFN1006 .

DSS2515M Features

* BVCEO > 15V
* IC = 500mA High Collector Current
* ICM = 1A Peak Pulse Current
* PD = 1000mW Power Dissipation
* Low Collector-Emitter Saturation Voltage, VCE(sat)
* 0.60mm2 Package Footprint, 13 times Smaller than SOT23
* 0.5mm Height Package Minimizing Off-Board Profil

DSS2515M Applications

* shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchase

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