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DSS4160T NPN LOW SATURATION TRANSISTOR

DSS4160T Description

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DSS4160T Features

* BVCEO > 60V
* IC = 1A high Continuous Collector Current
* ICM = 2A Peak Pulse Current
* RCE(sat) = 280mΩ for a Low Equivalent On-Resistance
* Low Saturation Voltage VCE(sat) < 280mV @ 1A
* Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

DSS4160T Applications

* shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchase

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Datasheet Details

Part number
DSS4160T
Manufacturer
DIODES ↗
File Size
181.94 KB
Datasheet
DSS4160T-Diodes.pdf
Description
NPN LOW SATURATION TRANSISTOR

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NPN LOW SATURATION TRANSISTOR Diodes
Diodes DSS4160T-like datasheet