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FCX558 Key Features

  • BVCEO > -400V
  • IC = -200mA High Continuous Current
  • ICM = -500mA Peak Pulse Current
  • Excellent hFE Characteristics up to -100mA
  • Low Saturation Voltage VCE(sat) < -200mV @ -20mA
  • plementary NPN Type: FCX458
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • Case: SOT89

Related Diodes Incorporated Datasheets

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FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
FCX591AQ PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FCX558 Description

Features  BVCEO > -400V  IC = -200mA High Continuous Current  ICM = -500mA Peak Pulse Current  Excellent hFE Characteristics up to -100mA  Low Saturation Voltage VCE(sat) < -200mV @ -20mA  plementary NPN Type: FCX458  Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability A Product Line of Diodes...