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FCX591AQ - PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEO > -40V.
  • Maximum Continuous Current IC = -1A.
  • Low Saturation Voltage VCE(SAT) < -500mV @ -1A.
  • Complementary NPN type: FCX491AQ.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SOT89.
  • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0.
  • Moisture.

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FCX591AQ 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features  BVCEO > -40V  Maximum Continuous Current IC = -1A  Low Saturation Voltage VCE(SAT) < -500mV @ -1A  Complementary NPN type: FCX491AQ  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT89  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208  Weight: 0.