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Diodes Semiconductor Electronic Components Datasheet

FZT549 Datasheet

PNP MEDIUM POWER TRANSISTOR

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Features
BVCEO > -30V
IC = -1A High Continuous Current
Excellent hFE Characteristics up to -2A
Low Saturation Voltage VCE(sat) < -0.5V @ -1A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
A Product Line of
Diodes Incorporated
Green
FZT549
30V PNP MEDIUM POWER TRANSISTOR IN SOT223
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-
STD-202, Method 208
Weight: 0.112 grams (Approximate)
SOT223
Top View
C
B
E
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
FZT549TA
AEC-Q101
FZT549
7
12 1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT223
FZT
549
FZT 549 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
FZT549
Document number: DS33138 Rev.3 - 2
1 of 7
www.diodes.com
June 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

FZT549 Datasheet

PNP MEDIUM POWER TRANSISTOR

No Preview Available !

A Product Line of
Diodes Incorporated
FZT549
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-35
-30
-7
-1
-2
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
2
3
62.5
41.7
19.4
-55 to +150
Unit
W
W
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
Electrostatic Discharge - Machine Model
ESD MM
400 V
Notes:
5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 50mm x 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
JEDEC Class
3A
C
FZT549
Document number: DS33138 Rev.3 - 2
2 of 7
www.diodes.com
June 2015
© Diodes Incorporated


Part Number FZT549
Description PNP MEDIUM POWER TRANSISTOR
Maker Diodes
Total Page 7 Pages
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