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ZABG4003 Key Features

  • Provides Bias for up to 4 GaAs and HEMT FETs
  • Operating Range of 2.1V to 5V
  • Ultra-Low Operating Current of 0.95mA
  • Dynamic FET Protection
  • Amplifier FET Drain Current Selectable (4mA to 15mA)
  • Regulated Negative Rail Generator Requires only 1 External
  • Expended Temperature Range of -40°C to +105°C
  • U-QFN3030-16 (Type B) Surface Mount Package
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Related Diodes Incorporated Datasheets

Part Number Description
ZABG4002 Advanced Low Power Four-Stage GaAs FET Bias IC
ZABG6002 LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
ZABG6003 6 STAGE FET LNA BIAS CONTROLLER
ZABG6004 6 STAGE FET LNA BIAS CONTROLLER

ZABG4003 Description

The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs monly used in satellite receiver LNBs with a minimum of external ponents whilst operating from a minimal voltage supply and using minimal current. The ZABG4003 has four FET bias stages that can be programmed to provide a constant drain current. Programming of the FET bias stage arrangement and the operating currents of each...