Description
The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with a minimum of external components whilst operating from a minimal voltage supply and using minimal current.
Features
- Provides Bias for up to 6 GaAs and HEMT FETs.
- 2 Amplifier FET Drain Current Programmable (4mA to 15mA).
- 4 Amplifier FET Drain Current Internally Fixed to 10mA.
- Operating Range of 2.1V to 5V.
- Ultra-Low Operating Current of 1.1mA.
- Dynamic FET Protection.
- Regulated Negative Rail Generator Requires only 1 External
Capacitor.
- Expended Temperature Range of -40°C to +105°C.
- U-QFN3030-16 (Type B) Surface Mount Package.
- Low External Component Count.
ZABG6003-Diodes.pdf
