ZABG6003 Overview
The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs monly used in satellite receiver LNBs with a minimum of external ponents whilst operating from a minimal voltage supply and using minimal current. The ZABG6003 has six FET bias stages. To optimize the system for noise and gain the drain current for two of the six stages can be programmed over the range of 4mA to 15mA.
ZABG6003 Key Features
- Provides Bias for up to 6 GaAs and HEMT FETs
- 2 Amplifier FET Drain Current Programmable (4mA to 15mA)
- 4 Amplifier FET Drain Current Internally Fixed to 10mA
- Operating Range of 2.1V to 5V
- Ultra-Low Operating Current of 1.1mA
- Dynamic FET Protection
- Regulated Negative Rail Generator Requires only 1 External
- Expended Temperature Range of -40°C to +105°C
- U-QFN3030-16 (Type B) Surface Mount Package
- Low External ponent Count