ZABG4002 Advanced Low Power Four-Stage GaAs FET Bias IC

Diodes

Description

A Product Line of Diodes Incorporated ZABG4002 LOW POWER 4 STAGE FET LNA BIAS CONTROLLER Summary The ZABG4002 is a four stage depletion mode FET bia.
The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with a minimum of.

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Datasheet Specifications

Part number: ZABG4002
Manufacturer: DIODES ↗
File Size: 118.56 KB
Datasheet: ZABG4002_Diodes.pdf
Description: Advanced Low Power Four-Stage GaAs FET Bias IC

Features

* NEW PRODUCT
* Four stage FET bias controller Operating range of 3.0V to 8.0V Low quiescent supply current, 1.2mA typical FET drain voltages set at 2.0V FET drain current selectable from 0 to 1

Applications

* such as those in found in PMR’s and microwave links. The ZABG4002 provides each FET with an independent protected negative gate voltage and positive drain voltage with user programmable drain current. Combining an advanced IC process and packaging techniques, the ZABG4002 helps minimise power consum

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ZABG4002 Advanced Low Power Four-Stage GaAs FET Bias Diodes

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