ZABG4002 Datasheet - Diodes

ZABG4002 Advanced Low Power Four-Stage GaAs FET Bias IC

The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with a minimum of external components whilst operating from a minimal voltage supply and using minimal current. The ZABG4002 provides four FET bias stages, arranged in.

A Product Line of Diodes Incorporated ZABG4002 LOW POWER 4 STAGE FET LNA BIAS CONTROLLER Summary The ZABG4002 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s (LNB’s), but its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provides each FET with an independent protected negative gate voltage and positive drain voltage with user programmable drain current. Combining an advanced IC pr.

ZABG4002 Features

* NEW PRODUCT

* Four stage FET bias controller Operating range of 3.0V to 8.0V Low quiescent supply current, 1.2mA typical FET drain voltages set at 2.0V FET drain current selectable from 0 to 1

ZABG4002_Diodes.pdf