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ZXMHC6A07T8 - COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE

Description

This new generation complementary MOSFET H-Bridge

Features

  • low on-resistance achievable with low gate drive.

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ADVANCE INNEFWORPRMOADTIUOCNT Green ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel BVDSS 60V -60V RDS(ON) max 0.3Ω @ VGS = 10V 0.45Ω @ VGS = 4.5V 0.425Ω @ VGS = -10V 0.63Ω @ VGS = -4.5V ID max TA = +25°C 1.8A 1.4A -1.5A -1.2A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Applications  DC Motor Control  DC-AC Inverters Features  2 x N + 2 x P Channels in a SOIC Package  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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