Datasheet4U Logo Datasheet4U.com

ZXMHC6A07T8 - COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE

General Description

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.

Key Features

  • Low On - Resistance.
  • Fast switching speed.
  • Low threshold.
  • Low gate drive www. DataSheet4U. com SM8 S1 G1 S4 G4.
  • SM8 package D1, D2 D3, D4.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Diodes
ZXMHC6A07N8 MOSFET H-Bridge Diodes
ZXMHC10A07N8 MOSFET H-Bridge Diodes
ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE Diodes
ZXMHC3A01N8 MOSFET H-Bridge Diodes

Other Datasheets by Zetex (now Diodes Incorporated)

Part Number Description
ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC3A01T8 COMPLEMENTARY 30V MOSFET
ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE
ZXM41N0F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
ZXM41N10F N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low On - Resistance • Fast switching speed • Low threshold • Low gate drive www.DataSheet4U.