ZXMHC6A07N8
ZXMHC6A07N8 is MOSFET H-Bridge manufactured by Diodes Incorporated.
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A Product Line of Diodes Incorporated
60V SO8 plementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS QG RDS(on) 0.25Ω @ VGS= 10V N-CH 60V 3.2n C 0.35Ω @ VGS= 4.5V 0.40Ω @ VGS= -10V P-CH -60V 5.1n C 0.60Ω @ VGS= -4.5V -1.2A 1.5A -1.4A ID TA= 25°C 1.8A
Description
This new generation plementary MOSFET H-Bridge Features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
- 2 x N + 2 x P channels in a SOIC package
P1D/N1D
P2D/N2D
Applications
- -
DC Motor control DC-AC Inverters
N1G
N2G
N1S/N2S
Ordering information
Device ZXMHC6A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
Device marking
ZXMHC 6A07
Issue 1.0
- March 2009
© Diodes Incorporated
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