ZXMHC6A07T8 - COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE

Diodes Incorporated

General Description

This new generation complementary MOSFET H-Bridge

Key Features

low on-resistance achievable with low gate drive.

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ZXMHC6A07T8 complementary 60v enhancement mode mosfet h-bridge by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	ZXMHC6A07T8
Manufacturer	Diodes Incorporated
File Size	811.35 KB
Description	COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
Datasheet	ZXMHC6A07T8 Datasheet

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Other Datasheets by Diodes Incorporated

Part Number	Description
ZXMHC6A07N8	MOSFET H-Bridge
ZXMHC10A07N8	MOSFET H-Bridge
ZXMHC10A07T8	COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
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ADVANCE INNEFWORPRMOADTIUOCNT Green ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel BVDSS 60V -60V RDS(ON) max 0.3Ω @ VGS = 10V 0.45Ω @ VGS = 4.5V 0.425Ω @ VGS = -10V 0.63Ω @ VGS = -4.5V ID max TA = +25°C 1.8A 1.4A -1.5A -1.2A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Applications  DC Motor Control  DC-AC Inverters Features  2 x N + 2 x P Channels in a SOIC Package  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.