* 100% Unclamped Inductive Switch (UIS) test in production High avalanche energy pulse withstand capability Low gate drive voltage (Logic level capable) Low input capacitance Low on-resistance Fast switching speed “Green” Component
ZXMN20B28K Datasheet (686.52 KB)
ZXMN20B28K
686.52 KB
200v n-channel enhancement mode mosfet.
A Product Line of Diodes Incorporated ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 750mΩ @ VGS = 10V 200V 780m.
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