ZXTN2038F Datasheet | Diodes Incorporated

Description This transistor bines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features - Low saturation voltage for reduced power dissipation - 1 to 2 amp high current capability - Pb-free - SOT23 package Applications - Power MOSFET gate driving - Low loss power switching Ordering information Device ZXTN2038FTA ZXTN2038FTC Reel size 7” 13” Tape width 8mm 8mm Quantity per reel 3,000 10,000 Device marking N38 Issue 4 - January 2009 © Diodes Incorporated, 2008 .zetex. .diodes. Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current (- ) Peak base current Power dissipation @ TA=25°C(- ) Operating and storage temperature Symbol VCBO VCEV VCEO VEBO ICM IC IBM PD Tj:Tstg Limit 80 80 60 5.0 2 1 1 350 55 to +150 Unit V V V V A A A m W °C NOTES: (- ) For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 4 - January 2009 © Diodes Incorporated, 2008 .zetex. .diodes. Electrical characteristics (@TAMB = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO Min....