ZXTNS618MCTA
Features and Benefits
NPN Transistor
- BVCEO > 20V
- IC = 4.5A Continuous Collector Current
- Low Saturation Voltage (150m V max @ 1A)
- RSAT = 47mΩ for a low equivalent On-Resistance
- h FE characterized up to 6A for high current gain hold up
Schottky Diode
- BVR > 40V
- IFAV = 3A Average Peak Forward Current
- Low VF < 500m V (@1A) for reduced power loss
- Fast switching due to Schottky barrier
Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, Ro HS pliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
A Product Line of Diodes Incorporated
ZXTNS618MC
20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE BINATION
Mechanical Data
- Case: DFN3020B-8
- Case Material: Molded Plastic, “Green” Molding ponent
- Terminals: Pre-Plated Ni Pd Au leadframe
- Nominal package height: 0.8mm
- UL Flammability Rating 94V-0
- Moisture...
