ZXTNS618MCTA Datasheet | Diodes Incorporated

Features and Benefits NPN Transistor - BVCEO > 20V - IC = 4.5A Continuous Collector Current - Low Saturation Voltage (150mV max @ 1A) - RSAT = 47mΩ for a low equivalent On-Resistance - hFE characterized up to 6A for high current gain hold up Schottky Diode - BVR > 40V - IFAV = 3A Average Peak Forward Current - Low VF < 500mV (@1A) for reduced power loss - Fast switching due to Schottky barrier Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS pliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability A Product Line of...