ZXTNS618MC Datasheet | Diodes Incorporated

OBSOLETE - PART DISCONTINUED PART OBSOLETE - CONTACT US 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE BINATION Features and Benefits NPN Transistor - BVCEO > 20V - IC = 4.5A Continuous Collector Current - Low Saturation Voltage (150m V Max @ 1A) - RSAT = 47mΩ for a Low Equivalent On-Resistance - h FE Characterized up to 6A for High Current Gain Hold up Schottky Diode - BVR > 40V - IFAV = 3A Average Peak Forward Current - Low VF < 500m V (@ 1A) for Reduced Power Loss - Fast Switching due to Schottky Barrier - Low Profile 0.8mm High Package for Thin Applications - RθJA Efficient, 40% Lower than SOT26 - 6mm2 Footprint, 50% Smaller than TSOP6 and SOT26 - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Mechanical Data - Package: W-DFN3020-8 - Package Material: Molded Plastic, “Green” Molding pound UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish - Ni Pd Au, Solderable per MIL-STD-202,...