Download ZXTNS618MC Datasheet PDF
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ZXTNS618MC Description

OBSOLETE PART DISCONTINUED PART OBSOLETE - CONTACT US ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE BINATION.

ZXTNS618MC Key Features

  • BVCEO > 20V
  • IC = 4.5A Continuous Collector Current
  • Low Saturation Voltage (150mV Max @ 1A)
  • RSAT = 47mΩ for a Low Equivalent On-Resistance
  • hFE Characterized up to 6A for High Current Gain Hold up
  • BVR > 40V
  • IFAV = 3A Average Peak Forward Current
  • Low VF < 500mV (@ 1A) for Reduced Power Loss
  • Fast Switching due to Schottky Barrier
  • Low Profile 0.8mm High Package for Thin