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ZXTNS618MC Datasheet 20v NPN Low Saturation Transistor And 1a Schottky Diode Combination

Manufacturer: Diodes Incorporated

Overview: OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE.

Key Features

  • NPN Transistor.
  • BVCEO > 20V.
  • IC = 4.5A Continuous Collector Current.
  • Low Saturation Voltage (150mV Max @ 1A).
  • RSAT = 47mΩ for a Low Equivalent On-Resistance.
  • hFE Characterized up to 6A for High Current Gain Hold up Schottky Diode.
  • BVR > 40V.
  • IFAV = 3A Average Peak Forward Current.
  • Low VF < 500mV (@ 1A) for Reduced Power Loss.
  • Fast Switching due to Schottky Barrier.
  • Low Profile 0.8mm High Package for Thin.

More Datasheets from Diodes Incorporated

Part Number Description
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ZXTNS618MC Distributor